Jose A. Carrillo, Irene M. Gamba, Chi-Wang Shu
Computational macroscopic approximations to the 1-D relaxation-time 
kinetic system for semiconductors
(1635K, postscript)

ABSTRACT.  \abstract{We study comparisons of deterministic computational 
methods for 1-D relaxation charged transport in submicron channel devices. 
Our analysis focuses 
on the appropriate macroscopic approximations under regimes associated to 
different devices with similar geometries. We show, when taking standard 
parameters corresponding to Si devices, that the kinetic one-dimensional 
relaxation model can be approximated by a multi-fluid domain decomposition 
technique that incorporates classical drift-diffusion equations with 
corrections in the current. In addition, when 
considering physical dimensions corresponding to GaAs devices, the 
technique requires new hydrodynamics 
that we propose and compute. Our comparison involves detailed 
computations 
of local distribution function solution of the kinetic equation, its 
first 
three moments compared with the computed fluid variables, and 
the presentation of all corresponding current-voltage characteristic 
curves.}